jziizu ^s.mi.-tonaucto'i ij^ioaucti, una. cx t/ 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STW7NA80 sth7na80fi n- channel enhancement mode fast power mos transistor type STW7NA80 sth7na80fi vdss 800 v 800 v rds(on) < 1.9 q < 1.9 a id 6.5 a 4 a typical ros(on) = 1.68 2 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances gate charge minimized reduced threshold voltage spread applications . high current, high speed switching . switch mode power supplies (smps) . dc-ac converters for welding equipment and uninterruptible power supplies and motor drive to-247 isowatt218 internal schematic diagram absolute maximum ratings symbol vds vdgr vgs id id |dm{?) plot viso tstg t, parameter drain-source voltage (vgs = 0) drain- gate voltage (res = 20 kq) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value STW7NA80 sth7na80fi 800 800 30 6.5 4 26 150 1.2 ? 4 2.5 26 60 0.48 4000 -65 to 150 150 unit v v v a a a w w/c v c c (?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
STW7NA80-sth7na80fi thermal data fmhj-case rthj-amb rthc-sink i, thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-247 0.83 isowatt218 2.08 30 0.1 300 c/w c/w c/w c avalanche characteristics symbol iar eas parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 8 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 50 v) max value 6.3 320 unit a mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions ld=250|ja vgs=0 vds = max rating vds = max rating tc=100c vqs = 30 v min. 800 typ. max. 25 50 100 unit v ha ha na onm symbol vgs(th) ros(on) id(oh) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 250 ^a vgs = 10v id= 3.5 a vds > id(oh) x rds(on)max vgs = 1 0 v min. 2.25 7 typ. 3 1.68 max. 3.75 1.9 unit v q a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > to(on) x rds(on)max lp= 3.5 a vds= 25 v f = 1 mhz vgs = 0 min. 4.5 typ. 6.3 1330 160 40 max. 1750 210 55 unit s pf pf pf
STW7NA80-sth7na80fi electrical characteristics switching on symbol td(on) tr (di/dt)on qg qgs qgd parameter turn-on time rise time turn-on current slope total gate charge gate-source charge gate-drain charge test conditions vdd = 400 v id = 3.5 a rq = 47il vgs = 10 v (see test circuit, figure 3) vdd = 640v id = 7 a rg = 470 vgs= 10 v (see test circuit, figure 5) vdd = 640 v id = 7 a vgs = 10 v min. typ. 3.5 9.5 170 58 8 27 max. 45 125 78 unit ns ns a/u.s nc nc nc switching off symbol tr(voff) tf tc parameter off-voltage rise time fall time cross-over time test conditions vdd = 640 v id = 6 a rg = 47 n vgs = 10 v (see test circuit, figure 5) min. typ. 90 25 125 max. 120 35 165 unit ns ns ns source drain diode symbol iso isdm(') vsd (*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 7 a vgs = 0 isd= 7 a di/dt = 100 a/u.s vdd = 100 v tj = 150 c (see test circuit, figure 5) min. typ. 850 15 35 max. 6.5 26 1.6 unit a a v ns (ic a (?) pulsed: pulse duration = 300 us, duty cycle 1.5 % (?) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 cc id(a)| io'buj id" 10" 10 10
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